| PART |
Description |
Maker |
| GS74104J-12 GS74104J-10 GS74104J-10I GS74104J-12I |
10ns 1M x 4 4Mb asynchronous SRAM
8ns 1M x 4 4Mb asynchronous SRAM
12ns 1M x 4 4Mb asynchronous SRAM
|
http://
GSI Technology
|
| GS74104ATJ |
1M x 4 4Mb Asynchronous SRAM
|
GSI Technology
|
| GS74108ATJ |
512K x 8 4Mb Asynchronous SRAM
|
GSI Technology
|
| N04L1618C2AB2-70I N04L1618C2A N04L1618C2AB N04L161 |
4Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx16 bit
|
http://
NANOAMP[NanoAmp Solutions, Inc.]
|
| N04L63W2AB27I N04L63W2AB27IT N04L63W2AT27I N04L63W |
4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K 隆驴 16 bit
4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K × 16 bit
|
ON Semiconductor
|
| GS74108J-15 GS74108TP-8I GS74108J-8I GS74108TP-15 |
512K x 8 4Mb Asynchronous SRAM 12k × 8 4Mb的异步SRAM
512K X 8 STANDARD SRAM, 8 ns, PDSO36 0.400 INCH, SOJ-36
512K X 8 STANDARD SRAM, 8 ns, PDSO44 0.400 INCH, TSOP2-44
|
GSI Technology, Inc.
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
|
| N04Q1618C2BX-85C N04Q1612C2BX-15C N04Q1618C2B N04Q |
4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256K×16 bit POWER SAVER TECHNOLOGY
4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256K】16 bit POWER SAVER TECHNOLOGY
|
AMI[AMI SEMICONDUCTOR]
|
| N04Q1618C2B N04Q1612C2BX-15C N04Q1618C2BX-15C N04Q |
4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256K6 bit POWER SAVER TECHNOLOGY
|
AMI SEMICONDUCTOR
|
| M68AF127BL55MC6 M68AF127BMC M68AF127B M68AF127BB M |
1Mbit 128K x8, 5V Asynchronous SRAM 1Mbit28K的8V的异步SRAM
AML22 Series, Electronic Control Pushbutton, Square, Standard Bezel, Lighted, 1 LED, DPDT, Momentary Action, Snap in panel mount
1 MBIT (128K X8) 5.0V ASYNCHRONOUS SRAM
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| GS71108TP-10 GS71108TP-12 GS71108TP-12I GS71108TP |
15ns 128K x 8 1Mb asynchronous SRAM
12ns 128K x 8 1Mb asynchronous SRAM
10ns 128K x 8 1Mb asynchronous SRAM
128K X 8 STANDARD SRAM, 10 ns, PDSO32 0.400 INCH, SOJ-32
128K X 8 STANDARD SRAM, 12 ns, PBGA48 6 X 8 MM, 0.75 MM PITCH, FBGA-48
128K X 8 STANDARD SRAM, 12 ns, PDSO32 0.300 INCH, SOJ-32
128K X 8 STANDARD SRAM, 15 ns, PBGA48 6 X 8 MM, 0.75 MM PITCH, FBGA-48
128K X 8 STANDARD SRAM, 15 ns, PDSO32
|
GSI[GSI Technology]
GSI Technology, Inc.
|
| M68AR016DN70ZB1T M68AR016DN70ZB6T M68AR016DN70ZH1T |
1M X 16 STANDARD SRAM, 70 ns, PBGA48
16 MBIT (1M X16) 1.8V ASYNCHRONOUS SRAM
16 Mbit 1M x16 1.8V Asynchronous SRAM
16 MBIT (1M X16) 1.8V ASYNCHRONOUS SRAM
Circular Connector; No. of Contacts:15; Series:; Body Material:Aluminum Alloy; Connecting Termination:Solder; Connector Shell Size:28; Circular Contact Gender:Socket; Circular Shell Style:Cable Receptacle; Insert Arrangement:28-17 RoHS Compliant: No
AB 7C 3#8 4#12 PIN RECP 1600万x16 1.8异步SRAM
ER 12C 12#16 SKT RECP LINE 1600万x16 1.8异步SRAM
AB 12C 12#16 SKT RECP 1600万x16 1.8异步SRAM
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| R1RW0408DGE-2PR R1RW0408D R1RW0408DGE-2LR |
4M High Speed SRAM (512-kword x 8-bit)
Memory>Fast SRAM>Asynchronous SRAM
|
Renesas Electronics Corporation.
RENESAS[Renesas Electronics Corporation]
|
